JayDz
30-04-13, 12:04
" Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets. "
FONTE (http://www.techpowerup.com/183347/Samsung-Now-Producing-4-Gb-LPDDR3-Mobile-DRAM-Using-20nm-class-Process-Technology.html)
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets. "
FONTE (http://www.techpowerup.com/183347/Samsung-Now-Producing-4-Gb-LPDDR3-Mobile-DRAM-Using-20nm-class-Process-Technology.html)